关键词: 拓扑绝缘体, Bi2Te3, 化学气相沉积, 弱反局域化

Abstract: Topological insulators have the low transport consumption and could be possibly used as the novel electrical transport materials in transformer substation. Here，we use chemical vapor deposition method to synthesize Bi2Te3 topological insulator nanoplates. Through characterization of optical microscopy，atomic force microscopy and scanning electron microscopy，we optimize the synthetic parameters and further obtain the Bi2Te3 nanoplates. We employe photolithography technique to fabricate metallic electrodes based on nanoplates. We measure the transport properties and observe the weak antilocalization effect originated from the topological surface states. We apply the traditional weak localization theory and find that the coherence length of surface state electrons is approximately 130 nm.

Key words: topological insulators, Bi2Te3, chemical vapor deposition, weak antilocalization