稳定的欧姆接触对半导体器件的正常工作起到至关重要的作用.目前市场上主要采用金/金锗镍合金作为n 型GaAs 的电极材料，工艺复杂，成本高昂.本文研究了一种新型的、廉价的适用于半绝缘GaAs 的欧姆接触电极材料Ag /Co 掺杂的非晶碳膜及其制备过程，以便于读者对半导体器件的制备工艺和流程有所了解.

Stable ohmic contacts play the important role in the normal operation of semiconductor devices. At present，Au /AuGeNi alloy is used as the electrode material of n type GaAs. The process is complex and the cost is high.In this paper，a new type of ohmic contact electrode material Ag /Co doped amorphous carbon film for semi-insulated GaAs and its preparation process are introduced to make it easy for readers to understand the process and technology of semiconductor devices.