以氧化层电荷非均匀分布的MOS 结构为例，介绍求解一维任意电荷浓度分布电势的3 种方法--电势叠加法、积 分区间变换法和掺杂矩法，并讨论它们的等价性.重点介绍了掺杂矩法在非均匀掺杂n⁺ p 结C-V 测试、非均匀掺杂MOSFET 阈值电压计算中的应用，并讨论了变容管、MOSFET 倒掺杂等原理.

Three methods such as potential superposition，integration interval transformation and doping moment，are introduced to calculate the potential induced by one-dimensional arbitrary charge distribution，taking a MOS structure with non-uniformly distributed oxide charges as an example. The equivalence of the three methods is verified. As a focus，the doping moment method is employed in C-V characterization of a non-uniformly doped n+p junction and threshold voltage calculation of MOSFETs with a non-uniformly doped channel. The principles of varactors and retrograde doping in MOSFET are discussed.