NaI( Tl) 谱仪中反散射峰的影响因素研究
收稿日期: 2018-08-08
修回日期: 2018-11-03
网络出版日期: 2019-05-10
基金资助
国家自然科学基金( 11775004) ; 理科基地( J1103206) 资助
Study of influence factors of backscattering peak in NaI ( Tl) spectrometer with Geant4
Received date: 2018-08-08
Revised date: 2018-11-03
Online published: 2019-05-10
李根, 魏凡, 楼建玲 . NaI( Tl) 谱仪中反散射峰的影响因素研究[J]. 大学物理, 2019 , 38(4) : 63 -69 . DOI: 10.16854 /j.cnki.1000-0712.180475
counts are simulated by the Code of Geant4 and the variable separation method. When using different substrate materials,
the ratio between the backscattering peak and full-energy peak counts,as well as the simulated saturation
thicknesses of different materials are in agreement with the experimental results. The backscattering peak counts as
functions of the thickness of scintillator packaging material,as well as the length,the cross-sectional area and the
volume of scintillator are also simulated,and the method to suppress the backscattering peak background is found.
Key words: Compton scattering; backscattering peak; solid angle; saturation thickness; Geant4
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