教学研究

一维三方势垒量子隧穿特性的研究

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  • 西安工业大学 基础学院物理系,陕西 西安710021
李海凤(1986—),内蒙古呼伦贝尔人,西安工业大学基础学院物理系讲师,博士,主要从事理论物理研究和教学工作.

收稿日期: 2023-05-08

  修回日期: 2023-06-02

  网络出版日期: 2024-03-22

基金资助

国家自然科学基金(21703166);陕西省科技厅自然科学基础研究计划(2023-JC-QN-0151)资助

Study on quantum tunneling of one-dimensional  triple square potential barriers

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  • School of Science, Xian Technological University, Xi’an, Shaanxi 710021, China

Received date: 2023-05-08

  Revised date: 2023-06-02

  Online published: 2024-03-22

摘要

本文通过严格求解定态薛定谔方程,研究了一维对称三方势垒的量子隧穿特性,解析地给出透射系数的精确表达式,并且数值模拟了势垒高度、势垒间距以及粒子入射能量对透射系数的影响.结果表明: 当取不同的势垒宽度,或者不同的粒子入射能量时,透射系数随着势垒间距的增加而呈现出明显的周期式振荡.将一维对称双方势垒和三方势垒进行比较,透射系数随着势垒间距的增大,均呈现周期性振荡,并且振荡周期相同,但三方势垒振荡更剧烈,振幅越大,并且三方对称势垒是双峰曲线, 而双方对称势垒是单峰曲线.该特性为设计新型纳米器件以及共振隧穿量子器件等提供理论指导.

本文引用格式

李海凤, 陈康康, 王欣茂 . 一维三方势垒量子隧穿特性的研究[J]. 大学物理, 2024 , 43(02) : 1 . DOI: 10.16854/j.cnki.1000-0712.230189

Abstract

In this paper, the quantum tunneling characteristics of onedimensional symmetric triplesquarepotential barriers are studied by solving the stationary state Schrdinger equation in different areas. Moreover, the exact expression of the transmission coefficient is analytically attained, and the dependence of the transmission coefficient on the barrier width, barrier spacing, and the incident energy of the particle is numerically simulated. Furthermore, the results show that when different potential barrier widths or different incident energies of the particle are taken, the periodic oscillation phenomenon of the transmission coefficient with the increasement of the barrier spacing is exhibited. Comparing with one-dimensional symmetric double barriers, the periods of the transmission coefficient oscillating with the barrier spacing increases are the same. However, the oscillation of the triple square potential barriers is more intense and the amplitude is larger. At a period, it is a bimodal curve for the triplesquare potential barriers, while it is a unimodal curve for the double-square potential barriers. This characteristic provides theoretical guidance for designing novel nanodevices and resonant tunneling quantum devices.

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