半导体物理课程中PN结、金半接触与MIS结构为常见的几种接触情况，但学生在学习这些接触类型时，常常难以将这几种不同的接触类型做同质化的统一对比分析，不能形成统一的知识体系，造成了理解上的混乱．本文提出一种适用于各类接触情况的能带弯曲统一判断方法，从内建电场的建立会影响载流子的电势能从而产生能带弯曲的角度，为各类接触的能带弯曲提供了统一说法，并从能带中载流子流动的微观角度解释内建电场的形成．此判断方法可帮助学生梳理半导体物理各类接触的知识，从而在能带分析学习中达到举一反三的效果．

In semiconductor physics course,PN junction,gold-semi contact and MIS structure are common contact situations. However,when students learn these contact types,they often find it difficult to make a homogeneous and unified comparative analysis of these different contact types,and cannot form a unified knowledge system,which causes confusion in understanding. In this paper,a unified judgment method of energy band bending applicable to various types of contact is proposed which provides a unified statement for the energy band bending for various types of contacts from the perspective that the establishment of built-in electric field affects the potential energy of carriers and thus produces energy band bending. The formation of the built-in electric field is explained from the microscopic point of view of the carriers flow in the energy band. This judgment method can help students sort out the knowledge of various physical contacts in semiconductors so as to achieve the effect of drawing inferences in the energy band analysis learning.