本研究通过数值模拟，系统分析了一维无限深方势阱中包含有限势垒结构的量子系统的物理特性，特别是量子隧穿效应的表现.利用投影格林函数方法，探讨了势垒宽度、高度及势阱宽度等结构参数对隧穿寿命的影响.本研究进一步优化了数值求解方法，提升了计算精度和效率.粒子的隧穿时间研究对半导体器件的制造具有理论上的指导作用，有助于更好地理解器件材料的性质.研究成果不仅为相关实验提供理论支撑，也为投影格林函数方法在高维复杂势场问题中的应用提供了新的思路.

Through numerical simulations, this study systematically investigates the physical characteristics of a onedimensional infinite square potential well incorporating finite potential barriers, with a particular focus on the manifestation of quantum tunneling phenomena. By employing the Projected Greens Function (PGF) method, the work explores how structural parameters—such as barrier width, barrier height, and well width—affect the tunneling lifetime of particles. The numerical solution approach has been further optimized to enhance both computational accuracy and efficiency. The analysis of tunneling time provides theoretical guidance for the design and fabrication of semiconductor devices and contributes to a more profound understanding of material behaviors in quantumscale systems. Overall, the results not only offer theoretical support for relevant experimental research, but also propose new perspectives for extending the application of the PGF method to higherdimensional and more complex potential problems.