短沟道负电容GAAFET的物理解析模型的理论推导
白刚, 陈成
Theoretical derivation of the physical analytical model of short-channel negative capacitance gate-all-around field effect transistor
大学物理 . 2024, (04): 36 .  DOI: 10.16854/j.cnki.1000-0712.230335