大学物理 ›› 2008, Vol. 27 ›› Issue (6): 26-26.

• 著者文摘 • 上一篇    下一篇

GaAs基InAs量子点中类氢杂质的束缚能

郑文礼[1,2] 李志文[1] 李树深[2] 王雪峰[2]   

  1. [1]承德民族师范高等专科学校物理系,河北承德067000 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083
  • 出版日期:2008-06-25 发布日期:2008-06-20

Binding energy of hydrogen-like impurity in InAs/GaAs quantum dot

  • Online:2008-06-25 Published:2008-06-20

摘要: 在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.

关键词: 有效质量, 束缚能, 微扰法, 量子点

Abstract: The binding energies of the ground state and the low-lying excited states of hydrogen-like impurity in a InAs/GaAs quantum dot are investigated by applying the effective mass approximation and the perturbation. In the two-dimensional polar coordinate, the electron Schrodinger equation is solved exactly in a parabolic confinement potential. The numerical results show that the binding energies of the ground state and the low - lying excited states of hydrogen-like impurity sensitively depend on the frequency of the parabolic confinement potential and the spectrum is shifted forward to the blue because of hydrogen-like impurites. These results are useful for designing and fabricating the QD devices.

Key words: effective mass, binding energies, perturbation, quantum dot

中图分类号: 

  • O471.1