大学物理 ›› 2017, Vol. 36 ›› Issue (6): 78-81.doi: 10.16854 /j.cnki.1000-0712.2017.06.019

• 编者按 • 上一篇    下一篇

半绝缘GaAs 的欧姆接触电极材料Ag /Co 掺杂的非晶碳膜制备与检测

杜维嘉,翟章印,吉帅,藏婷玉   

  1. 淮阴师范学院物理系,江苏淮安223300
  • 收稿日期:2016-11-07 修回日期:2016-12-30 出版日期:2017-06-20 发布日期:2017-06-20
  • 通讯作者: 翟章印, email: zhangyinz@ sina.com
  • 作者简介:杜维嘉( 1995—) ,女,江苏南京市人,淮阴师范学院物理系应用物理专业2013 级本科生.
  • 基金资助:
    江苏省自然科学基金( BK20140450) 、江苏省高等学校大学生创新创业训练计划项目( 201510323016z) 资助

Preparation and detection of an ohmic contact electrode material Ag /Codoped amorphous carbon film for semi-insulated GaAs   

DU Wei-jia1,ZHAI Zhang-yin1, JI Shuai,ZANG Ting-yu   

  • Received:2016-11-07 Revised:2016-12-30 Online:2017-06-20 Published:2017-06-20

摘要: 稳定的欧姆接触对半导体器件的正常工作起到至关重要的作用.目前市场上主要采用金/金锗镍合金作为n 型GaAs 的电极材料,工艺复杂,成本高昂.本文研究了一种新型的、廉价的适用于半绝缘GaAs 的欧姆接触电极材料Ag /Co 掺杂的非晶碳膜及其制备过程,以便于读者对半导体器件的制备工艺和流程有所了解.

关键词: 半绝缘砷化镓, 欧姆接触, 光电导

Abstract: Stable ohmic contacts play the important role in the normal operation of semiconductor devices. At present,Au /AuGeNi alloy is used as the electrode material of n type GaAs. The process is complex and the cost is high.In this paper,a new type of ohmic contact electrode material Ag /Co doped amorphous carbon film for semi-insulated GaAs and its preparation process are introduced to make it easy for readers to understand the process and technology of semiconductor devices.

Key words: semi-insulated GaAs, ohmic contact, photoconductivity