大学物理 ›› 2025, Vol. 44 ›› Issue (4): 21-.doi: 10.16854/j.cnki.1000-0712.240372

• 教学讨论 • 上一篇    下一篇

GaN PN结的耗尽区宽度研究

孙辰洋,杨沛珑,刘波,汪莱   

  1. 清华大学 电子工程系,北京100084
  • 收稿日期:2024-08-15 修回日期:2024-12-07 出版日期:2025-06-25 发布日期:2025-07-01
  • 作者简介:孙辰洋(2000-),男,安徽马鞍山人,清华大学在读博士生,主要从事GaN Micro-LED及显示应用研究工作.
  • 基金资助:
    清华大学本科教育教学改革项目(ZY01_03)资助

Study on the depletion region width of GaN PN junction

SUN Chenyang, YANG Peilong, LIU Bo, WANG Lai   

  1. Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Received:2024-08-15 Revised:2024-12-07 Online:2025-06-25 Published:2025-07-01

摘要: 耗尽区宽度是PN结一项基本参数.在固体物理教科书中,耗尽宽度的计算通常仅限于 Si 和 Ge 等材料,缺乏对 GaN 等宽带隙半导体材料PN 结的分析.耗尽区宽度与耗尽区电荷密度息息相关.Si、Ge材料的杂质电离能很低,常温下完全电离,耗尽区电荷密度显然等于杂质浓度.而p-GaN中受主杂质Mg的电离能约220~270 MeV,常温下部分电离.所以,GaN PN结耗尽区宽度将由杂质浓度与电离程度共同决定.本文首先计算了GaN材料中不同杂质在不同浓度下的电离程度.结果表明,为获得足够空穴浓度,p-GaN重掺杂至1019 cm-3的条件下,Mg电离程度确实很低.然后,利用一款基于Scharfetter-Gummel法求解漂移扩散方程的开源求解器仿真计算得出GaN PN结耗尽区宽度、杂质电离程度等重要参数.根据仿真结果,GaN PN结耗尽区中杂质电离程度大幅提升.因此,可以使用掺杂浓度近似计算GaN PN结耗尽区宽度.本文的研究补充了固体物理教材中关于GaN PN结的内容,有助于后续课程的学习.

关键词: GaN, 杂质电离, PN结, 耗尽区宽度

Abstract: The width of the depletion region is a fundamental parameter of PN junctions. In solid state physics textbooks, the calculation of depletion widths is usually limited to materials such as Si and Ge, and there is a lack of analysis of the PN junction of the wide bandgap semiconductor material likeGaN. The width of the depletion region is closely related to the charge density of the depletion region. The ionization energies of donors and acceptors in Si and Ge materials are relatively low, allowing for complete ionization at room temperature. Thus, the charge density in the depletion region is obviously equal to the impurity concentration. In contrast, the ionization energy of the acceptor dopant Mg in pGaN is approximately 220 to 270 meV, resulting in only part of Mg impurities undergoing ionization at room temperature. Therefore, the width of the GaN PN junction depletion region will be determined by both the impurity concentration and the degree of ionization. In this paper, the degree of ionization of different impurities in GaN material under different concentrations is calculated. The results show that the degree of Mg ionization is indeed very low when pGaN is heavily doped to 1019 cm-3in order to obtain sufficient hole concentration.Subsequently, using an opensource solver based on the ScharfetterGummel method to solve the driftdiffusion equations, we simulate the GaN PN junction and calculate important parameters such as depletion region width and impurity ionization levels. According to the simulation results, the impurity ionization level in the GaN PN junctions depletion region is significantly enhanced. Therefore, the width of the depletion region of the GaN PN junction can be appropriately calculated with the doping concentration. The research in this paper supplements the content of GaN PN junction in the textbook of solidstate physics, which is helpful for the study of subsequent courses.

Key words: GaN, ionization of impurity, PN junctions, depletion region width