大学物理 ›› 2007, Vol. 26 ›› Issue (4): 12-12.

• 著者文摘 • 上一篇    下一篇

单负双负磁导率和电容率介质中的Goos-Hanchen位移

曾伦武   

  1. 南京农业大学工学院,江苏南京210031
  • 出版日期:2007-04-25 发布日期:2007-04-20

Goos-Hanchen shifts at the interface of double-negative or single-negative permittivity and permeability

  • Online:2007-04-25 Published:2007-04-20

摘要: 推导了Coos-Hanchen位移的表达式,讨论了光线从双正介质(电容率ε〉0,磁导率μ〉0)或双负介质(ε〈0,μ〈0)中入射到双正介质、双负介质或单负介质(ε〉0,μ〈0或ε〈0,μ〉0)界面的Goos-Hanchen效应。

关键词: Goos-Hanchen效应, 全反射, 正负磁导率, 正负电容率

Abstract: Goos-Hanchen shift of total reflection wave at interface is derived, and Goos-Hanchen effect of incident beam from double-positive ( ε 〉0,μ 〉0) and double-negative ( ε 〈 0,μ 〈 0) to double-negative (ε 〈 0,μ 〈 0) or single-negative ( ε〉 0,μ 〈 0 or ε 〈 0,μ〉 0) are discussed.

Key words: Goos- Hanchen effect, total reflection, negative permittivity, negative permeability

中图分类号: 

  • O431