College Physics ›› 2024, Vol. 43 ›› Issue (7): 22-.doi: 10.16854/j.cnki.1000-0712.230326
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ZENG Shu-ming, NI Jia-yi, WANG Wei, YANG Jin-peng
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Abstract: In this paper, classical thermionic emission model is employed to explore the formulas and their evolution for derivation of thermionic emission current in semiconductor Schottky junctions under three-dimensional, two-dimensional, and one-dimensional scenarios. These extended formulas can be widely applied to current research hotspot of interface barrier extraction and analysis in low-dimensional semiconductors, and should further contribute to enhancing students' understanding of semiconductor knowledge and the integrated application of related scientific research and analytical methods.
Key words: semiconductor, Schottky junction, thermionic emission, barrier
ZENG Shu-ming, NI Jia-yi, WANG Wei, YANG Jin-peng. Study of dimensionality-dependent thermionic emission mechanism in semiconductor Schottky heterostructures[J].College Physics, 2024, 43(7): 22-.
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URL: https://dxwl.bnu.edu.cn/EN/10.16854/j.cnki.1000-0712.230326
https://dxwl.bnu.edu.cn/EN/Y2024/V43/I7/22
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