›› 2011, Vol. 30 ›› Issue (11): 32-32.
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Abstract: In this paper, we obtain data about the Hall voltage of InSb changing with temperature. According to the relationship of the Hall coefficient of semiconductor and temperature, we calculate the band gap by using two methods, and compare the difference between the two methods for calculating the band gap.
Key words: carrier, intrinsic excitation, band gap, Hall coefficient
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https://dxwl.bnu.edu.cn/EN/Y2011/V30/I11/32
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