College Physics ›› 2018, Vol. 37 ›› Issue (3): 55-62.doi: 10.16854 /j.cnki.1000-0712.170394

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Relationship between physical parameters in doped semiconductors by GUI

XU Yue-hua,ZHANG Jia-zhen   

  1. School of Mathematics and Physics,Changzhou University,Changzhou,Jiangsu 213164,China
  • Received:2017-07-04 Revised:2017-10-16 Online:2018-03-20 Published:2018-03-20

Abstract: The Fermi energy level varies with the temperature is the central issue of the conductivity in the semiconductor materials. The relationship between the Fermi energy level and the temperature is complex,because it contains multiply parameters. Furthermore,in that relationship the Fermi integral can not be calculated manually.In this paper,we use the Simpson numerical method to deal with the Fermi integral,then take advantage the powerful matrix computing capabilities and interface design function of MATLAB software to set up a GUI interface.Specifically,we can set parameters according to the N-type,P -type and mixed doping under different circumstances,demonstrate the variation of Fermi energy level and carrier concentration with temperature. So that the students taking semiconductor physics course can obtain a more intuitive and systematical learning experience and teachers can also remarkable improve classroom teaching efficiency.

Key words: doping, semiconductor, GUI