Abstract: Experiment on side effects of the Hall effect at different temperatures with P-type InSb is performed.It is found that the Hall voltage due to the side effect is a non-monotonic function of the temperature.The reason for this phenomenon is investigated,and the results show the temperature dependence of side effects is affected by the carrier mobility at different temperatures directly.

Key words: Hall effect, Ettingshausen effect, Nernst effect, Right-Leduc effect